Bi(2)Se(3) thin films were constructed of coalesced lamella in the thickness of 50-80 nm. Nanostructured bismuth selenide thin films have been successfully fabricated on a silicon substrate at low temperature by rational design of the precursor solution. Sun, Zhengliang Liufu, Shengcong Chen, Lidong Synthesis and characterization of nanostructured bismuth selenide thin films. Mixture films of the three compounds were also investigated. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. Watanabe, Hitoshi Mihara, Takashi Yoshimori, Hiroyuki Araujo, Carlosįerroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator. A considerable increase in carrier density in films thinner than 30 nm was observed. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strainĭemidov, E.
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